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| FDFMA2P853 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode August 2005 FDFMA2P853 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. Features MOSFET: -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V RDS(ON) = 160 m @ VGS = -2.5 V RDS(ON) = 240 m @ VGS = -1.8 V Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm Schottky: VF < 0.46 V @ 500 mA PIN A C NC D A D NC D 1 2 3 6 5 4 C G S MicroFET Symbol VDSS VGSS ID VRRM IO PD TJ, TSTG Absolute Maximum Ratings TA = 25C unless otherwise noted Parameter MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current -Continuous -Pulsed Schottky Repetitive Peak Reverse voltage Schottky Average Forward Current Power dissipation for Single Operation Power dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) (Note 1b) (Note 1a) Ratings -20 8 -2.2 -6 20 1 1.4 0.7 -55 to +150 Units V V A V A W o C G S C Thermal Characteristics RJA RJA RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 173 86 140 o C/W Package Marking and Ordering Information Device Marking .853 Device FDFMA2P853 Reel Size 7inch 1 Tape Width 8mm Quantity 3000 units FDFMA2P853 Rev. C (W) (c)2005 Fairchild Semiconductor Corporation FDFMA2P853 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, VGS = 0V, ID = -250A ID = -250A, Referenced to 25C VDS = -16V, VGS = 0V VGS = 8V, VDS = 0V -20 -12 -1 100 V mV/C A nA On Characteristics (Note 2) VGS(th) VGS(th) TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = -250A ID = -250A, Referenced to 25C VGS = -4.5V, ID = -3.0A VGS = -2.5V, ID = -2.5A RDS(ON) Static Drain-Source On-Resistance VGS = -1.8V, ID = -1.0A VGS = -4.5V, ID = -3.0A TJ = 125C ID(on) gFS On-State Drain Current Forward Transconductance VGS = -4.5V, VDS = -5V VDS = -5V, ID = -3.0A -0.4 -20 -0.7 2 90 120 172 118 7 -1.5 120 160 240 160 A S m V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10V, VGS = 0V, f = 1.0MHz 435 80 45 pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10V, ID = -3.0A, VGS = -4.5V VDD = -10V, ID = -1A VGS = -4.5V, RGEN = 6 9 11 15 6 4 0.8 0.9 18 19 27 12 6 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0V, IS = -1.1 A (Note 2) IF= -3.0A, dIF/dt=100A/s -0.8 17 6 -1.1 -1.2 A V ns nC Schottky Diode Characteristic TJ = 25C IR VF Reverse Leakage VR = 20V IF = 500mA TJ = 85C TJ = 125C Forward Voltage TJ = 25C TJ = 125C 9.9 0.3 2.3 0.4 0.3 100 1 10 0.46 0.35 A mA mA V 2 FDFMA2P853 Rev. C (W) FDFMA2P853 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TA = 25C unless otherwise noted Notes: 1. RJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a) MOSFET RJA = 86C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) MOSFET RJA = 173C/W when mounted on a minimum pad of 2 oz copper (c) Schottky RJA = 86C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (d) Schottky RJA = 140C/W when mounted on a minimum pad of 2 oz copper a) 86oC/W when mounted on a 1in2 pad of 2 oz copper b) 173oC/W when mounted on a minimum pad of 2 oz copper c) 86oC/W when mounted on a 1in2 pad of 2 oz copper d) 140oC/W when mounted on a minimum pad of 2 oz copper Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3 FDFMA2P853 Rev. C (W) FDFMA2P853 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics 6 5 -ID, DRAIN CURRENT (A) 4 -1.8V VGS = -4.5V -3.5V -3.0V -2.5V -2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 VGS = -1.5V 2.6 2.2 1.8 1.4 1 0.6 3 2 -1.5V -1.8V -2.0V -2.5V -3.0V -3.5V 1 0 0 0.5 1 1.5 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 -4.5V 0 1 2 3 4 -ID, DRAIN CURRENT (A) 5 6 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 -50 RDS(ON), ON-RESISTANCE (OHM) ID = -3.0A VGS = -4.5V 0.28 ID = -1.5A 0.22 0.16 TA = 125oC 0.1 TA = 25oC 0.04 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 6 VDS = -5V 10 VGS = 0V -IS, REVERSE DRAIN CURRENT (A) 1 5 -ID, DRAIN CURRENT (A) 4 3 2 1 0 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = 125oC 0.1 TA = 125 C 0.01 25oC -55oC o -55 C 25oC o 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4 FDFMA2P853 Rev. C (W) FDFMA2P853 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3.0A 700 600 CAPACITANCE (pF) f = 1MHz VGS = 0 V 4 VDS = -5V -15V 500 400 300 200 100 Crss 3 -10V Ciss 2 1 Coss 0 0 1 2 3 Qg, GATE CHARGE (nC) 4 5 0 0 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 10 IF, FORWARD LEAKAGE CURRENT(A) IR, REVERSE LEAKAGE CURRENT (A) 0.01 1 TJ = 125oC 0.001 TJ = 125oC 0.1 TJ = 25oC 0.0001 TJ = 85oC 0.01 0.00001 TJ = 25oC 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (V) 0.7 0.8 0.000001 0 5 10 15 VR, REVERSE VOLTAGE (V) 20 Figure 9. Schottky Diode Forward Voltage Figure 10. Schottky Diode Reverse Current Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. Figure 11. Transient Thermal Response Curve 5 FDFMA2P853 Rev. C (W) FDFMA2P853 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode 6 FDFMA2P853 Rev. C (W) FDFMA2P853 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 7 FDFMA2P853 Rev. C (W) |
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